Local order structure of a-SiOxNy:H grown by PECVD
نویسندگان
چکیده
منابع مشابه
Local Order Structure of a - SiO x N y : H Grown by PECVD
In this work we study the structural properties of amorphous oxynitride lms (a-SiOxNy), grown by plasma enhanced chemical vapour deposition (PECVD)at 320C. The lms were deposited at di erent ow ratio of N2O and SiH4. The atomic composition of the samples was determined by means of Rutherford backscattering spectrometry (RBS). The local order structure was studied by X-ray absorption spectroscop...
متن کاملساختار کلاسهایی از حلقه های z- موضعی و c- موضعی the structure of some classes of z-local and c-local rings
فرض کنیمr یک حلقه تعویض پذیر ویکدار موضعی باشدو(j(r رایکال جیکوبسن r و(z(r مجموعه مقسوم علیه های صفر حلقه r باشد.گوییم r یک حلقه z- موضعی است هرگاه j(r)^2=. .همچنین برای یک حلقه تعویض پذیر r فرض کنیم c یک عنصر ناصفر از (z( r باشد با این خاصیت که cz( r)=0 گوییم حلقه موضعی r یک حلقه c - موضعی است هرگاه و{0 و z(r)^2={cو z(r)^3=0, نیز xz( r)=0 نتیجه دهد که x عضو {c,0 } است. در این پایان نامه ساخ...
On the origin of emission and thermal quenching of SRSO:Er3+ films grown by ECR-PECVD
Silicon nanocrystals embedded in a silicon-rich silicon oxide matrix doped with Er3+ ions have been fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been investigated. Temperature quenching of the photoluminescence originating from the silicon nanocrystals and the erbium ions has be...
متن کاملOn the origin of emission and thermal quenching of SRSO:Er films grown by ECR-PECVD
Silicon nanocrystals embedded in a silicon-rich silicon oxide matrix doped with Er ions have been fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been investigated. Temperature quenching of the photoluminescence originating from the silicon nanocrystals and the erbium ions has been...
متن کاملExperimental and theoretical study of amorphous silicon roughness evolution grown by low-temperature PECVD
Using real-time spectroscopic ellipsometry (RTSE) the evolution of the surface roughness in aSi:H thin-films grown by low-temperature plasma-enhanced chemical vapor deposition (PECVD) has been studied as a function of the hydrogen dilution ratio Rd =[H2]/[SiH4] with 15 ≤ Rd ≤ 60. To describe the roughness evolution, we have used a 3D linearized continuum equation which includes a negative surfa...
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ژورنال
عنوان ژورنال: Brazilian Journal of Physics
سال: 2002
ISSN: 0103-9733
DOI: 10.1590/s0103-97332002000200033